IPL60R125P7AUMA1 vs IPB60R280P7ATMA1 Comparación
Comparación detallada lado a lado de IPL60R125P7AUMA1 por Infineon y IPB60R280P7ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IPL60R125P7AUMA1 | IPB60R280P7ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,95 | $0,88 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P7 | CoolMOS P7 (600 V) |
| Technology | Superjunction (SJ) N-channel MOSFET | Superjunction (SJ) |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID, Tc=25C) | 27 A | — |
| On-State Resistance RDS(on) max | 125 mOhm | — |
| Gate Charge (Qg, typ) | 36 nC | — |
| Total Gate Charge Qg (typ) | 36 nC | — |
| Output Capacitance Coss (typ) | [DATA_NEEDED: Coss value] | — |
| Reverse Recovery Charge Qrr | [DATA_NEEDED: Qrr] | — |
| Rise Time / Fall Time (tr/tf) | [DATA_NEEDED: tr/tf] | — |
| Gate-Source Voltage (VGS) | +/-20 V (max) | — |
| Gate Threshold Voltage VGS(th), typ | 3.5 V | — |
| Avalanche Energy (EAS) | [DATA_NEEDED: EAS] | — |
| Temperatura de unión de funcionamiento | -55 C to +150 C | — |
| Encapsulado | ThinPAK 8x8 (4-pin + exposed pad) | PG-TO263-3 (D2PAK) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel de sensibilidad a la humedad (MSL) | MSL 2 (per JEDEC J-STD-020) | — |
| Estado RoHS | Compliant | Compliant |
| Pin Configuration | Drain Pin 5, Gate Pin 1, Power Source Pin 3-4, Driver Source Pin 2 | — |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DSS) | — | 600 V |
| Continuous Drain Current (I_D, T_C=25°C) | — | 12 A |
| On-Resistance R_DS(on) max (V_GS=10V) | — | 280 mOhm |
| Gate-Source Threshold V_GS(th) typ | — | 3.5 V |
| Power Dissipation P_D (T_C=25°C) | — | 53 W |
| Recuento de pines | — | 3 (2 + Tab) |
| Rango de temperatura de funcionamiento | — | -55 °C to +150 °C (T_j max) |
| Configuration | — | Single N-Channel |
| Lead-Free | — | Yes |
| Generation | — | 7th Gen CoolMOS (successor to P6) |