IPL65R070C7AUMA1 vs IPL60R125C7AUMA1 Vergleich
Detaillierter Direktvergleich von IPL65R070C7AUMA1 von Infineon und IPL60R125C7AUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPL65R070C7AUMA1 | IPL60R125C7AUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,68 | $2,10 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS C7 | CoolMOS C7 |
| Technology | Superjunction N-Channel MOSFET | CoolMOS (superjunction) |
| Drain-Source Voltage (VDS) | 650 V | 600 V |
| Continuous Drain Current (ID) at TC=25°C | 28 A | — |
| Continuous Drain Current (ID) at TC=100°C | [DATA_NEEDED: ID at TC=100°C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | 70 mΩ (typical) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/range] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Power Dissipation (PD) at TC=25°C | 169 W | — |
| Avalanche Energy (EAS) | 171 mJ | — |
| Betriebs-Sperrschichttemperatur | -55°C to +150°C | — |
| Gehäuse | PG-VSON-4 (surface mount) | PG-VSON-4 (surface mount) |
| Montageart | Surface Mount | Surface Mount |
| Configuration | Single with built-in diode | — |
| Channel Type | N-Channel | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | 1 (unlimited) |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Tc) | — | 17 A |
| On-State Resistance (RDS(on), max) | — | 125 mOhm |
| Power Dissipation (PD, Tc) | — | 103 W |
| Gate Threshold Voltage (VGS(th), typ) | — | 3.5 V |
| Gate Charge (Qg, typ) | — | [DATA_NEEDED: Qg value] |
| Pin-Anzahl | — | 4 (Gate / Drain / Drain / Source) |
| Betriebstemperaturbereich | — | -55 C to +150 C (junction) |
| Channel Mode | — | Enhancement |
| Drive Voltage (recommended) | — | 10 V VGS |