IPL65R070C7AUMA1 vs IPN95R3K7P7ATMA1 Vergleich

Detaillierter Direktvergleich von IPL65R070C7AUMA1 von Infineon und IPN95R3K7P7ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPL65R070C7AUMA1 IPN95R3K7P7ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,68 $0,44
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS C7 CoolMOS P7
Technology Superjunction N-Channel MOSFET Super-junction (CoolMOS P7)
Drain-Source Voltage (VDS) 650 V 950 V
Continuous Drain Current (ID) at TC=25°C 28 A —
Continuous Drain Current (ID) at TC=100°C [DATA_NEEDED: ID at TC=100°C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max at VGS=10V 70 mΩ (typical) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/range] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Power Dissipation (PD) at TC=25°C 169 W —
Avalanche Energy (EAS) 171 mJ —
Betriebs-Sperrschichttemperatur -55°C to +150°C -55 C to +150 C
Gehäuse PG-VSON-4 (surface mount) PG-SOT223 (3-pin + tab, surface mount)
Montageart Surface Mount Surface Mount
Configuration Single with built-in diode —
Channel Type N-Channel —
RoHS-Status Compliant Compliant
Lead-Free Yes Yes
MSL-Level [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
Transistortyp — N-Channel MOSFET
Continuous Drain Current (ID) at Tc — 2.0 A
Power Dissipation (Pd) at Tc — 6 W
On-State Resistance (RDS(on)) max — 3700 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) typ — [DATA_NEEDED: VGS(th) typ]

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