IPL65R070C7AUMA1 vs IPN95R3K7P7ATMA1 Comparación
Comparación detallada lado a lado de IPL65R070C7AUMA1 por Infineon y IPN95R3K7P7ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPN95R3K7P7ATMA1 - 950V CoolMOS P7 N-MOSFET 2A SOT-223 | Infineon
IPN95R3K7P7ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPL65R070C7AUMA1 | IPN95R3K7P7ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,68 | $0,44 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS C7 | CoolMOS P7 |
| Technology | Superjunction N-Channel MOSFET | Super-junction (CoolMOS P7) |
| Drain-Source Voltage (VDS) | 650 V | 950 V |
| Continuous Drain Current (ID) at TC=25°C | 28 A | — |
| Continuous Drain Current (ID) at TC=100°C | [DATA_NEEDED: ID at TC=100°C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | 70 mΩ (typical) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/range] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Power Dissipation (PD) at TC=25°C | 169 W | — |
| Avalanche Energy (EAS) | 171 mJ | — |
| Temperatura de unión de funcionamiento | -55°C to +150°C | -55 C to +150 C |
| Encapsulado | PG-VSON-4 (surface mount) | PG-SOT223 (3-pin + tab, surface mount) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Configuration | Single with built-in diode | — |
| Channel Type | N-Channel | — |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Nivel MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Tipo de transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc | — | 2.0 A |
| Power Dissipation (Pd) at Tc | — | 6 W |
| On-State Resistance (RDS(on)) max | — | 3700 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) typ | — | [DATA_NEEDED: VGS(th) typ] |