IPN95R3K7P7ATMA1 vs IPD80R1K4P7ATMA1 Vergleich
Detaillierter Direktvergleich von IPN95R3K7P7ATMA1 von Infineon und IPD80R1K4P7ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPN95R3K7P7ATMA1 | IPD80R1K4P7ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,44 | $0,62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | CoolMOS P7 |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 950 V | 800 V |
| Continuous Drain Current (ID) at Tc | 2.0 A | — |
| Power Dissipation (Pd) at Tc | 6 W | — |
| On-State Resistance (RDS(on)) max | 3700 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typ] | — |
| Technology | Super-junction (CoolMOS P7) | N-Channel Superjunction |
| Gehäuse | PG-SOT223 (3-pin + tab, surface mount) | PG-TO252-2 (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| Betriebs-Sperrschichttemperatur | -55 C to +150 C | -55C to +150C |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Continuous Drain Current (ID) at Tc=25C | — | 4 A |
| On-Resistance (RDS(on)) typ/max | — | 1.2 ohm typ / 1.4 ohm max |
| Gate Threshold Voltage (VGS(th)) | — | 3.5 V (typ) |
| Gate Charge (Qg) typ | — | [DATA_NEEDED: Qg value] |
| Verlustleistung (Ptot) | — | 32 W |
| Pin-Anzahl | — | 3 (Gate, Drain/Tab, Source) |
| REACH Status | — | Compliant |
| Avalanche Energy Rated | — | Yes |
| Body Diode | — | Integrated, fast recovery |