IPN95R3K7P7ATMA1 vs IPD80R1K4P7ATMA1 Comparison
Detailed side-by-side comparison of IPN95R3K7P7ATMA1 by Infineon and IPD80R1K4P7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPN95R3K7P7ATMA1 - 950V CoolMOS P7 N-MOSFET 2A SOT-223 | Infineon
IPN95R3K7P7ATMA1 ✓ Active
Specification Comparison
| Parameter | IPN95R3K7P7ATMA1 | IPD80R1K4P7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | CoolMOS P7 |
| Transistor Type | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 950 V | 800 V |
| Continuous Drain Current (ID) at Tc | 2.0 A | — |
| Power Dissipation (Pd) at Tc | 6 W | — |
| On-State Resistance (RDS(on)) max | 3700 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typ] | — |
| Technology | Super-junction (CoolMOS P7) | N-Channel Superjunction |
| Package | PG-SOT223 (3-pin + tab, surface mount) | PG-TO252-2 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Junction Temperature | -55 C to +150 C | -55C to +150C |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Continuous Drain Current (ID) at Tc=25C | — | 4 A |
| On-Resistance (RDS(on)) typ/max | — | 1.2 ohm typ / 1.4 ohm max |
| Gate Threshold Voltage (VGS(th)) | — | 3.5 V (typ) |
| Gate Charge (Qg) typ | — | [DATA_NEEDED: Qg value] |
| Power Dissipation (Ptot) | — | 32 W |
| Pin Count | — | 3 (Gate, Drain/Tab, Source) |
| REACH Status | — | Compliant |
| Avalanche Energy Rated | — | Yes |
| Body Diode | — | Integrated, fast recovery |