IPN95R3K7P7ATMA1 vs IPL65R070C7AUMA1 Vergleich

Detaillierter Direktvergleich von IPN95R3K7P7ATMA1 von Infineon und IPL65R070C7AUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPN95R3K7P7ATMA1 IPL65R070C7AUMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,44 $1,68
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS P7 CoolMOS C7
Transistortyp N-Channel MOSFET —
Drain-Source Voltage (VDS) 950 V 650 V
Continuous Drain Current (ID) at Tc 2.0 A —
Power Dissipation (Pd) at Tc 6 W —
On-State Resistance (RDS(on)) max 3700 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) typ [DATA_NEEDED: VGS(th) typ] —
Technology Super-junction (CoolMOS P7) Superjunction N-Channel MOSFET
Gehäuse PG-SOT223 (3-pin + tab, surface mount) PG-VSON-4 (surface mount)
Montageart Surface Mount Surface Mount
Betriebs-Sperrschichttemperatur -55 C to +150 C -55°C to +150°C
RoHS-Status Compliant Compliant
Lead-Free Yes Yes
MSL-Level [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
Continuous Drain Current (ID) at TC=25°C — 28 A
Continuous Drain Current (ID) at TC=100°C — [DATA_NEEDED: ID at TC=100°C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V — 70 mΩ (typical)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/range]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Power Dissipation (PD) at TC=25°C — 169 W
Avalanche Energy (EAS) — 171 mJ
Configuration — Single with built-in diode
Channel Type — N-Channel

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