IPN95R3K7P7ATMA1 vs IPL65R070C7AUMA1 Comparaison
Comparaison détaillée côte à côte de IPN95R3K7P7ATMA1 par Infineon et IPL65R070C7AUMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IPN95R3K7P7ATMA1 | IPL65R070C7AUMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,44 | $1,68 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | CoolMOS C7 |
| Type de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 950 V | 650 V |
| Continuous Drain Current (ID) at Tc | 2.0 A | — |
| Power Dissipation (Pd) at Tc | 6 W | — |
| On-State Resistance (RDS(on)) max | 3700 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typ] | — |
| Technology | Super-junction (CoolMOS P7) | Superjunction N-Channel MOSFET |
| Boîtier | PG-SOT223 (3-pin + tab, surface mount) | PG-VSON-4 (surface mount) |
| Type de montage | Surface Mount | Surface Mount |
| Température de jonction en fonctionnement | -55 C to +150 C | -55°C to +150°C |
| Statut RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Niveau MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Continuous Drain Current (ID) at TC=25°C | — | 28 A |
| Continuous Drain Current (ID) at TC=100°C | — | [DATA_NEEDED: ID at TC=100°C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | — | 70 mΩ (typical) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/range] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) at TC=25°C | — | 169 W |
| Avalanche Energy (EAS) | — | 171 mJ |
| Configuration | — | Single with built-in diode |
| Channel Type | — | N-Channel |