IPN95R3K7P7ATMA1 vs IPN60R2K0PFD7SATMA1 Vergleich
Detaillierter Direktvergleich von IPN95R3K7P7ATMA1 von Infineon und IPN60R2K0PFD7SATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPN95R3K7P7ATMA1 | IPN60R2K0PFD7SATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,44 | $0,28 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 950 V | — |
| Continuous Drain Current (ID) at Tc | 2.0 A | — |
| Power Dissipation (Pd) at Tc | 6 W | — |
| On-State Resistance (RDS(on)) max | 3700 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | ±20 V |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typ] | — |
| Technology | Super-junction (CoolMOS P7) | CoolMOS superjunction |
| Gehäuse | PG-SOT223 (3-pin + tab, surface mount) | PG-SOT223-3-1 (SOT-223) |
| Montageart | Surface Mount | Surface Mount |
| Betriebs-Sperrschichttemperatur | -55 C to +150 C | — |
| RoHS-Status | Compliant | Compliant (per Newark listing) |
| Lead-Free | Yes | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Product Series | — | CoolMOS PFD7 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | — | 600 V |
| Continuous Drain Current (Tc) | — | 3 A |
| Power Dissipation (Tc) | — | 6 W |
| RDS(on) typical @ VGS=10V | — | 2.0 Ohm |
| RDS(on) max @ VGS=10V | — | 1.626 Ohm (per Infineon product page) |
| Gate Threshold Voltage (VGS(th)) | — | 3.8 nC @ 10 V (per UTMel listing) |
| Input Capacitance (Ciss) | — | 134 pF @ 400 V (per UTMel listing) |
| Betriebstemperaturbereich | — | [DATA_NEEDED: operating temperature range] |