IPN95R3K7P7ATMA1 vs IPN60R2K0PFD7SATMA1 Comparison
Detailed side-by-side comparison of IPN95R3K7P7ATMA1 by Infineon and IPN60R2K0PFD7SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPN95R3K7P7ATMA1 - 950V CoolMOS P7 N-MOSFET 2A SOT-223 | Infineon
IPN95R3K7P7ATMA1 ✓ Active
Specification Comparison
| Parameter | IPN95R3K7P7ATMA1 | IPN60R2K0PFD7SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | — |
| Transistor Type | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 950 V | — |
| Continuous Drain Current (ID) at Tc | 2.0 A | — |
| Power Dissipation (Pd) at Tc | 6 W | — |
| On-State Resistance (RDS(on)) max | 3700 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | ±20 V |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typ] | — |
| Technology | Super-junction (CoolMOS P7) | CoolMOS superjunction |
| Package | PG-SOT223 (3-pin + tab, surface mount) | PG-SOT223-3-1 (SOT-223) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Junction Temperature | -55 C to +150 C | — |
| RoHS Status | Compliant | Compliant (per Newark listing) |
| Lead-Free | Yes | — |
| MSL Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Product Series | — | CoolMOS PFD7 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | — | 600 V |
| Continuous Drain Current (Tc) | — | 3 A |
| Power Dissipation (Tc) | — | 6 W |
| RDS(on) typical @ VGS=10V | — | 2.0 Ohm |
| RDS(on) max @ VGS=10V | — | 1.626 Ohm (per Infineon product page) |
| Gate Threshold Voltage (VGS(th)) | — | 3.8 nC @ 10 V (per UTMel listing) |
| Input Capacitance (Ciss) | — | 134 pF @ 400 V (per UTMel listing) |
| Operating Temperature Range | — | [DATA_NEEDED: operating temperature range] |