IPN95R3K7P7ATMA1 vs IPN60R2K0PFD7SATMA1 比較
詳細な並列比較: IPN95R3K7P7ATMA1 メーカー: Infineon および IPN60R2K0PFD7SATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPN95R3K7P7ATMA1 | IPN60R2K0PFD7SATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.44 | $0.28 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | — |
| トランジスタタイプ | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 950 V | — |
| Continuous Drain Current (ID) at Tc | 2.0 A | — |
| Power Dissipation (Pd) at Tc | 6 W | — |
| On-State Resistance (RDS(on)) max | 3700 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | ±20 V |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typ] | — |
| Technology | Super-junction (CoolMOS P7) | CoolMOS superjunction |
| パッケージ | PG-SOT223 (3-pin + tab, surface mount) | PG-SOT223-3-1 (SOT-223) |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作接合温度 | -55 C to +150 C | — |
| RoHS ステータス | Compliant | Compliant (per Newark listing) |
| Lead-Free | Yes | — |
| MSLレベル | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Product Series | — | CoolMOS PFD7 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | — | 600 V |
| Continuous Drain Current (Tc) | — | 3 A |
| Power Dissipation (Tc) | — | 6 W |
| RDS(on) typical @ VGS=10V | — | 2.0 Ohm |
| RDS(on) max @ VGS=10V | — | 1.626 Ohm (per Infineon product page) |
| Gate Threshold Voltage (VGS(th)) | — | 3.8 nC @ 10 V (per UTMel listing) |
| Input Capacitance (Ciss) | — | 134 pF @ 400 V (per UTMel listing) |
| 動作温度範囲 | — | [DATA_NEEDED: operating temperature range] |