IPP120N08S403AKSA1 vs FDP100N10 Vergleich

Detaillierter Direktvergleich von IPP120N08S403AKSA1 von Infineon und FDP100N10 von onsemi. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IPP120N08S403AKSA1 IPP120N08S403AKSA1 - 80V 120A N-Ch MOSFET | Infineon OptiMOS

IPP120N08S403AKSA1 - 80V 120A N-Ch MOSFET | Infineon OptiMOS

IPP120N08S403AKSA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IPP120N08S403AKSA1 FDP100N10
Marke Infineon onsemi
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $2,15 $1,32
Drain-to-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID, Tc) 120 A —
Pulsed Drain Current (bondwire-limited) 245 A at 25 C —
Maximum Power Dissipation (Ptot) 278 W (Tc) —
On-State Resistance (RDS(on)) 2.8 mOhm typical at VGS=10 V, ID=100 A —
Gate Threshold Voltage (VGS(th)) 4 V max —
Total Gate Charge (Qg) 167 nC —
Input Capacitance (Ciss) 11550 pF —
Thermal Resistance, Junction-to-Case (RthJC) 0.54 K/W —
Betriebs-Sperrschichttemperatur -55 C to +175 C —
Gehäuse TO-220-3-1 (PG-TO220-3-1) TO-220-3 (TO-220AB)
Montageart Through Hole Through Hole
MSL-Level MSL1 (peak reflow up to 260 C) —
Automotive Qualification AEC-Q101 qualified —
Avalanche Rating 100% avalanche-tested —
RoHS-Status Compliant (Green Product) [DATA_NEEDED: RoHS status]
Channel Type N-Channel enhancement mode —
Technology Family OptiMOS —
Polarity — N-Channel
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) — 75 A (Tc)
On-State Resistance (RDS(on) Max) — 10 mOhm
Power Dissipation (PD) — 208 W (Tc)
Gate-Source Voltage (VGS Max) — +/-20 V
Gate Threshold Voltage (VGS(th) Max) — 4.5 V @ 250 uA
Technology — PowerTrench MOSFET
Configuration — Single MOSFET
Product Series — PowerTrench
Avalanche Rated — Yes (100% avalanche tested)
Montagestil — Through Hole / TO-220AB package
Manufacturer — Fairchild Semiconductor (onsemi)
Gate Charge (Qg) — [DATA_NEEDED: gate charge]

Datenblätter & Ressourcen

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