IPP120N08S403AKSA1 vs FDP100N10 Comparison
Detailed side-by-side comparison of IPP120N08S403AKSA1 by Infineon and FDP100N10 by onsemi. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPP120N08S403AKSA1 | FDP100N10 |
|---|---|---|
| Brand | Infineon | onsemi |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Drain-to-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID, Tc) | 120 A | — |
| Pulsed Drain Current (bondwire-limited) | 245 A at 25 C | — |
| Maximum Power Dissipation (Ptot) | 278 W (Tc) | — |
| On-State Resistance (RDS(on)) | 2.8 mOhm typical at VGS=10 V, ID=100 A | — |
| Gate Threshold Voltage (VGS(th)) | 4 V max | — |
| Total Gate Charge (Qg) | 167 nC | — |
| Input Capacitance (Ciss) | 11550 pF | — |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.54 K/W | — |
| Operating Junction Temperature | -55 C to +175 C | — |
| Package | TO-220-3-1 (PG-TO220-3-1) | TO-220-3 (TO-220AB) |
| Mounting Type | Through Hole | Through Hole |
| MSL Level | MSL1 (peak reflow up to 260 C) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Avalanche Rating | 100% avalanche-tested | — |
| RoHS Status | Compliant (Green Product) | [DATA_NEEDED: RoHS status] |
| Channel Type | N-Channel enhancement mode | — |
| Technology Family | OptiMOS | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) | — | 75 A (Tc) |
| On-State Resistance (RDS(on) Max) | — | 10 mOhm |
| Power Dissipation (PD) | — | 208 W (Tc) |
| Gate-Source Voltage (VGS Max) | — | +/-20 V |
| Gate Threshold Voltage (VGS(th) Max) | — | 4.5 V @ 250 uA |
| Technology | — | PowerTrench MOSFET |
| Configuration | — | Single MOSFET |
| Product Series | — | PowerTrench |
| Avalanche Rated | — | Yes (100% avalanche tested) |
| Mounting Style | — | Through Hole / TO-220AB package |
| Manufacturer | — | Fairchild Semiconductor (onsemi) |
| Gate Charge (Qg) | — | [DATA_NEEDED: gate charge] |