IPP120N08S403AKSA1 vs FDP100N10 比較
詳細な並列比較: IPP120N08S403AKSA1 メーカー: Infineon および FDP100N10 メーカー: onsemi。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPP120N08S403AKSA1 | FDP100N10 |
|---|---|---|
| ブランド | Infineon | onsemi |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $2.15 | $1.32 |
| Drain-to-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID, Tc) | 120 A | — |
| Pulsed Drain Current (bondwire-limited) | 245 A at 25 C | — |
| Maximum Power Dissipation (Ptot) | 278 W (Tc) | — |
| On-State Resistance (RDS(on)) | 2.8 mOhm typical at VGS=10 V, ID=100 A | — |
| Gate Threshold Voltage (VGS(th)) | 4 V max | — |
| Total Gate Charge (Qg) | 167 nC | — |
| Input Capacitance (Ciss) | 11550 pF | — |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.54 K/W | — |
| 動作接合温度 | -55 C to +175 C | — |
| パッケージ | TO-220-3-1 (PG-TO220-3-1) | TO-220-3 (TO-220AB) |
| 実装タイプ | Through Hole | Through Hole |
| MSLレベル | MSL1 (peak reflow up to 260 C) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Avalanche Rating | 100% avalanche-tested | — |
| RoHS ステータス | Compliant (Green Product) | [DATA_NEEDED: RoHS status] |
| Channel Type | N-Channel enhancement mode | — |
| Technology Family | OptiMOS | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) | — | 75 A (Tc) |
| On-State Resistance (RDS(on) Max) | — | 10 mOhm |
| Power Dissipation (PD) | — | 208 W (Tc) |
| Gate-Source Voltage (VGS Max) | — | +/-20 V |
| Gate Threshold Voltage (VGS(th) Max) | — | 4.5 V @ 250 uA |
| Technology | — | PowerTrench MOSFET |
| Configuration | — | Single MOSFET |
| Product Series | — | PowerTrench |
| Avalanche Rated | — | Yes (100% avalanche tested) |
| 実装スタイル | — | Through Hole / TO-220AB package |
| Manufacturer | — | Fairchild Semiconductor (onsemi) |
| Gate Charge (Qg) | — | [DATA_NEEDED: gate charge] |