IPP147N12N3GXKSA1 vs IPP320N20N3GXKSA1 Vergleich
Detaillierter Direktvergleich von IPP147N12N3GXKSA1 von Infineon und IPP320N20N3GXKSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPP320N20N3GXKSA1 - 200V 34A OptiMOS 3 N-Channel MOSFET | Infineon
IPP320N20N3GXKSA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPP147N12N3GXKSA1 | IPP320N20N3GXKSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,62 | $1,36 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | — |
| Technology | OptiMOS 3 trench MOSFET | N-Channel Trench MOSFET |
| Transistortyp | N-Channel MOSFET | — |
| Configuration | Single with built-in diode | — |
| Drain-to-Source Voltage (Vdss) | 120 V | — |
| Continuous Drain Current (Id) at Tc=25C | 56 A | — |
| Continuous Drain Current (Id) at Ta | 56 A (Ta, per DigiKey listing) | — |
| Power Dissipation (Pd) at Tc=25C | 107 W | — |
| Betriebstemperaturbereich | [DATA_NEEDED: Tj max and operating range] | -55°C to +175°C |
| Gehäuse | PG-TO220-3 (through-hole) | TO-220-3 (PG-TO220-3) through-hole |
| Montageart | Through Hole | Through Hole |
| Anzahl der Pins | 3 (3+Tab) | 3 (3 + Tab) |
| Gate Charge (Qg) | [DATA_NEEDED: typical Qg value] | — |
| Rds(on) max | [DATA_NEEDED: Rds(on) max in mOhm at Vgs=10V] | — |
| Vgs(th) (Gate Threshold) | [DATA_NEEDED: typical gate threshold voltage] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: typical Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: typical Coss] | — |
| Reverse Recovery (trr) | [DATA_NEEDED: body-diode reverse recovery time] | — |
| Avalanche Energy Rating | Single-pulse avalanche rated | — |
| RoHS-Status | Compliant (per distributor listing suffixes XKSA1) | Compliant |
| Lead-Free | Yes | Yes |
| Qualification | Automotive grade (per datasheet.live listing 'Automotive') | — |
| Packing Method | Tube | — |
| Product Family | — | OptiMOS 3 |
| Drain-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) at TC=25°C | — | 34 A |
| On-State Resistance RDS(on) max at VGS=10V | — | 32 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 4 V |
| Total Power Dissipation PD at TC=25°C | — | 136 W |
| Channel Type | — | N-Channel |
| Element Configuration | — | Single |
| MSL-Level | — | Not applicable (through-hole) |