IPP147N12N3GXKSA1 vs IPP320N20N3GXKSA1 Comparison

Detailed side-by-side comparison of IPP147N12N3GXKSA1 by Infineon and IPP320N20N3GXKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPP147N12N3GXKSA1 IPP147N12N3GXKSA1 - 120V 56A OptiMOS N-Channel MOSFET | Infineon

IPP147N12N3GXKSA1 - 120V 56A OptiMOS N-Channel MOSFET | Infineon

IPP147N12N3GXKSA1 βœ“ Active

Specification Comparison

Parameter IPP147N12N3GXKSA1 IPP320N20N3GXKSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.62 $1.36
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS β€”
Technology OptiMOS 3 trench MOSFET N-Channel Trench MOSFET
Transistor Type N-Channel MOSFET β€”
Configuration Single with built-in diode β€”
Drain-to-Source Voltage (Vdss) 120 V β€”
Continuous Drain Current (Id) at Tc=25C 56 A β€”
Continuous Drain Current (Id) at Ta 56 A (Ta, per DigiKey listing) β€”
Power Dissipation (Pd) at Tc=25C 107 W β€”
Operating Temperature Range [DATA_NEEDED: Tj max and operating range] -55Β°C to +175Β°C
Package PG-TO220-3 (through-hole) TO-220-3 (PG-TO220-3) through-hole
Mounting Type Through Hole Through Hole
Number of Pins 3 (3+Tab) 3 (3 + Tab)
Gate Charge (Qg) [DATA_NEEDED: typical Qg value] β€”
Rds(on) max [DATA_NEEDED: Rds(on) max in mOhm at Vgs=10V] β€”
Vgs(th) (Gate Threshold) [DATA_NEEDED: typical gate threshold voltage] β€”
Input Capacitance (Ciss) [DATA_NEEDED: typical Ciss] β€”
Output Capacitance (Coss) [DATA_NEEDED: typical Coss] β€”
Reverse Recovery (trr) [DATA_NEEDED: body-diode reverse recovery time] β€”
Avalanche Energy Rating Single-pulse avalanche rated β€”
RoHS Status Compliant (per distributor listing suffixes XKSA1) Compliant
Lead-Free Yes Yes
Qualification Automotive grade (per datasheet.live listing 'Automotive') β€”
Packing Method Tube β€”
Product Family β€” OptiMOS 3
Drain-Source Voltage (VDS) β€” 200 V
Continuous Drain Current (ID) at TC=25Β°C β€” 34 A
On-State Resistance RDS(on) max at VGS=10V β€” 32 mΞ©
Gate Threshold Voltage VGS(th) typ β€” 4 V
Total Power Dissipation PD at TC=25Β°C β€” 136 W
Channel Type β€” N-Channel
Element Configuration β€” Single
MSL Level β€” Not applicable (through-hole)

Datasheets & Resources

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