IPP147N12N3GXKSA1 vs IPP320N20N3GXKSA1 对比

详细并排对比 IPP147N12N3GXKSA1 出自 Infineon 和 IPP320N20N3GXKSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPP147N12N3GXKSA1 IPP147N12N3GXKSA1 - 120V 56A OptiMOS N-Channel MOSFET | Infineon

IPP147N12N3GXKSA1 - 120V 56A OptiMOS N-Channel MOSFET | Infineon

IPP147N12N3GXKSA1 ✓ 量产中

规格对比

参数 IPP147N12N3GXKSA1 IPP320N20N3GXKSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.62 $1.36
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS —
Technology OptiMOS 3 trench MOSFET N-Channel Trench MOSFET
晶体管类型 N-Channel MOSFET —
Configuration Single with built-in diode —
Drain-to-Source Voltage (Vdss) 120 V —
Continuous Drain Current (Id) at Tc=25C 56 A —
Continuous Drain Current (Id) at Ta 56 A (Ta, per DigiKey listing) —
Power Dissipation (Pd) at Tc=25C 107 W —
工作温度范围 [DATA_NEEDED: Tj max and operating range] -55°C to +175°C
封装 PG-TO220-3 (through-hole) TO-220-3 (PG-TO220-3) through-hole
安装类型 Through Hole Through Hole
引脚数 3 (3+Tab) 3 (3 + Tab)
Gate Charge (Qg) [DATA_NEEDED: typical Qg value] —
Rds(on) max [DATA_NEEDED: Rds(on) max in mOhm at Vgs=10V] —
Vgs(th) (Gate Threshold) [DATA_NEEDED: typical gate threshold voltage] —
Input Capacitance (Ciss) [DATA_NEEDED: typical Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: typical Coss] —
Reverse Recovery (trr) [DATA_NEEDED: body-diode reverse recovery time] —
Avalanche Energy Rating Single-pulse avalanche rated —
RoHS 状态 Compliant (per distributor listing suffixes XKSA1) Compliant
Lead-Free Yes Yes
Qualification Automotive grade (per datasheet.live listing 'Automotive') —
Packing Method Tube —
Product Family — OptiMOS 3
Drain-Source Voltage (VDS) — 200 V
Continuous Drain Current (ID) at TC=25°C — 34 A
On-State Resistance RDS(on) max at VGS=10V — 32 mΩ
Gate Threshold Voltage VGS(th) typ — 4 V
Total Power Dissipation PD at TC=25°C — 136 W
Channel Type — N-Channel
Element Configuration — Single
MSL 等级 — Not applicable (through-hole)

数据手册与资源

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