IPP147N12N3GXKSA1 vs IPP320N20N3GXKSA1 比較

詳細な並列比較: IPP147N12N3GXKSA1 メーカー: Infineon および IPP320N20N3GXKSA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。

Infineon
IPP147N12N3GXKSA1 IPP147N12N3GXKSA1 - 120V 56A OptiMOS N-Channel MOSFET | Infineon

IPP147N12N3GXKSA1 - 120V 56A OptiMOS N-Channel MOSFET | Infineon

IPP147N12N3GXKSA1 ✓ 生産中

仕様比較

パラメータ IPP147N12N3GXKSA1 IPP320N20N3GXKSA1
ブランド Infineon Infineon
カテゴリ MOSFETs MOSFETs
ライフサイクル状態 有効 有効
在庫状況 In Stock In Stock
単価(USD) $1.62 $1.36
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS —
Technology OptiMOS 3 trench MOSFET N-Channel Trench MOSFET
トランジスタタイプ N-Channel MOSFET —
Configuration Single with built-in diode —
Drain-to-Source Voltage (Vdss) 120 V —
Continuous Drain Current (Id) at Tc=25C 56 A —
Continuous Drain Current (Id) at Ta 56 A (Ta, per DigiKey listing) —
Power Dissipation (Pd) at Tc=25C 107 W —
動作温度範囲 [DATA_NEEDED: Tj max and operating range] -55°C to +175°C
パッケージ PG-TO220-3 (through-hole) TO-220-3 (PG-TO220-3) through-hole
実装タイプ Through Hole Through Hole
ピン数 3 (3+Tab) 3 (3 + Tab)
Gate Charge (Qg) [DATA_NEEDED: typical Qg value] —
Rds(on) max [DATA_NEEDED: Rds(on) max in mOhm at Vgs=10V] —
Vgs(th) (Gate Threshold) [DATA_NEEDED: typical gate threshold voltage] —
Input Capacitance (Ciss) [DATA_NEEDED: typical Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: typical Coss] —
Reverse Recovery (trr) [DATA_NEEDED: body-diode reverse recovery time] —
Avalanche Energy Rating Single-pulse avalanche rated —
RoHS ステータス Compliant (per distributor listing suffixes XKSA1) Compliant
Lead-Free Yes Yes
Qualification Automotive grade (per datasheet.live listing 'Automotive') —
Packing Method Tube —
Product Family — OptiMOS 3
Drain-Source Voltage (VDS) — 200 V
Continuous Drain Current (ID) at TC=25°C — 34 A
On-State Resistance RDS(on) max at VGS=10V — 32 mΩ
Gate Threshold Voltage VGS(th) typ — 4 V
Total Power Dissipation PD at TC=25°C — 136 W
Channel Type — N-Channel
Element Configuration — Single
MSLレベル — Not applicable (through-hole)

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