IPP60R180P7XKSA1 vs IPP100N12S305AKSA2 Vergleich

Detaillierter Direktvergleich von IPP60R180P7XKSA1 von Infineon und IPP100N12S305AKSA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPP60R180P7XKSA1 IPP100N12S305AKSA2
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,30 $3,78
Manufacturer Infineon Technologies Infineon Technologies
Technology CoolMOS P7 (Superjunction N-Channel) —
Drain-Source Voltage (VDS) 600 V 120 V
Continuous Drain Current (ID) at TC=25°C 18 A —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed drain current at TC=25°C] —
On-Resistance RDS(on) max at VGS=10V 180 mΩ —
Gate Threshold Voltage VGS(th) typ 3.5 V [DATA_NEEDED: VGS(th)]
Gate Charge Qg typ [DATA_NEEDED: total gate charge at VGS=10V] —
Power Dissipation PD at TC=25°C 72 W —
Betriebstemperaturbereich -55 °C to +150 °C -55C to +175C (TJ)
Gehäuse PG-TO220-3 (through-hole) PG-TO220-3-1 (Through Hole)
Montageart Through Hole Through Hole
Anzahl der Pins 3 (Gate, Drain, Source) —
Avalanche Energy Rated Yes Yes (single-pulse)
RoHS-Status Compliant Compliant
Lead-Free Yes —
MSL-Level N/A (through-hole) N/A (Through Hole)
Product Family — OptiMOS 5
FET Type — N-Channel
Continuous Drain Current (ID, TC=25C) — 100 A
Continuous Drain Current (ID, TC=100C) — [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Maximum Power Dissipation (PD, TC=25C) — 300 W
On-State Resistance R_DS(on) max @ VGS=10V — [DATA_NEEDED: R_DS(on) max]
Gate Charge Qg typ @ VGS=10V — [DATA_NEEDED: total gate charge]
Total Gate Charge Qg — [DATA_NEEDED: Qg value]
Reverse Recovery Charge Qrr — [DATA_NEEDED: Qrr value]
Pin-Anzahl — 3 (Gate, Drain, Source)

Datenblätter & Ressourcen

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