IPP60R180P7XKSA1 vs IPP100N12S305AKSA2 Comparaison
Comparaison détaillée côte à côte de IPP60R180P7XKSA1 par Infineon et IPP100N12S305AKSA2 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IPP100N12S305AKSA2 - 120V 100A N-Ch OptiMOS Power MOSFET | Infineon
IPP100N12S305AKSA2 ✓ ActifComparaison des spécifications
| Paramètre | IPP60R180P7XKSA1 | IPP100N12S305AKSA2 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,30 | $3,78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | CoolMOS P7 (Superjunction N-Channel) | — |
| Drain-Source Voltage (VDS) | 600 V | 120 V |
| Continuous Drain Current (ID) at TC=25°C | 18 A | — |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed drain current at TC=25°C] | — |
| On-Resistance RDS(on) max at VGS=10V | 180 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | [DATA_NEEDED: VGS(th)] |
| Gate Charge Qg typ | [DATA_NEEDED: total gate charge at VGS=10V] | — |
| Power Dissipation PD at TC=25°C | 72 W | — |
| Plage de température de fonctionnement | -55 °C to +150 °C | -55C to +175C (TJ) |
| Boîtier | PG-TO220-3 (through-hole) | PG-TO220-3-1 (Through Hole) |
| Type de montage | Through Hole | Through Hole |
| Nombre de broches | 3 (Gate, Drain, Source) | — |
| Avalanche Energy Rated | Yes | Yes (single-pulse) |
| Statut RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Niveau MSL | N/A (through-hole) | N/A (Through Hole) |
| Product Family | — | OptiMOS 5 |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, TC=25C) | — | 100 A |
| Continuous Drain Current (ID, TC=100C) | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD, TC=25C) | — | 300 W |
| On-State Resistance R_DS(on) max @ VGS=10V | — | [DATA_NEEDED: R_DS(on) max] |
| Gate Charge Qg typ @ VGS=10V | — | [DATA_NEEDED: total gate charge] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg value] |
| Reverse Recovery Charge Qrr | — | [DATA_NEEDED: Qrr value] |
| Nombre de broches | — | 3 (Gate, Drain, Source) |