IPP60R180P7XKSA1 vs IPP100N12S305AKSA2 Comparación
Comparación detallada lado a lado de IPP60R180P7XKSA1 por Infineon y IPP100N12S305AKSA2 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPP100N12S305AKSA2 - 120V 100A N-Ch OptiMOS Power MOSFET | Infineon
IPP100N12S305AKSA2 ✓ ActivoComparación de especificaciones
| Parámetro | IPP60R180P7XKSA1 | IPP100N12S305AKSA2 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,30 | $3,78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | CoolMOS P7 (Superjunction N-Channel) | — |
| Drain-Source Voltage (VDS) | 600 V | 120 V |
| Continuous Drain Current (ID) at TC=25°C | 18 A | — |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed drain current at TC=25°C] | — |
| On-Resistance RDS(on) max at VGS=10V | 180 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | [DATA_NEEDED: VGS(th)] |
| Gate Charge Qg typ | [DATA_NEEDED: total gate charge at VGS=10V] | — |
| Power Dissipation PD at TC=25°C | 72 W | — |
| Rango de temperatura de funcionamiento | -55 °C to +150 °C | -55C to +175C (TJ) |
| Encapsulado | PG-TO220-3 (through-hole) | PG-TO220-3-1 (Through Hole) |
| Tipo de montaje | Through Hole | Through Hole |
| Número de pines | 3 (Gate, Drain, Source) | — |
| Avalanche Energy Rated | Yes | Yes (single-pulse) |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Nivel MSL | N/A (through-hole) | N/A (Through Hole) |
| Product Family | — | OptiMOS 5 |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, TC=25C) | — | 100 A |
| Continuous Drain Current (ID, TC=100C) | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD, TC=25C) | — | 300 W |
| On-State Resistance R_DS(on) max @ VGS=10V | — | [DATA_NEEDED: R_DS(on) max] |
| Gate Charge Qg typ @ VGS=10V | — | [DATA_NEEDED: total gate charge] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg value] |
| Reverse Recovery Charge Qrr | — | [DATA_NEEDED: Qrr value] |
| Recuento de pines | — | 3 (Gate, Drain, Source) |