IPP60R180P7XKSA1 vs IPP100N12S305AKSA2 비교

다음의 상세 나란히 비교: IPP60R180P7XKSA1 제조: Infineon 및 IPP100N12S305AKSA2 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IPP60R180P7XKSA1 IPP100N12S305AKSA2
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.30 $3.78
Manufacturer Infineon Technologies Infineon Technologies
Technology CoolMOS P7 (Superjunction N-Channel) —
Drain-Source Voltage (VDS) 600 V 120 V
Continuous Drain Current (ID) at TC=25°C 18 A —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed drain current at TC=25°C] —
On-Resistance RDS(on) max at VGS=10V 180 mΩ —
Gate Threshold Voltage VGS(th) typ 3.5 V [DATA_NEEDED: VGS(th)]
Gate Charge Qg typ [DATA_NEEDED: total gate charge at VGS=10V] —
Power Dissipation PD at TC=25°C 72 W —
동작 온도 범위 -55 °C to +150 °C -55C to +175C (TJ)
패키지 PG-TO220-3 (through-hole) PG-TO220-3-1 (Through Hole)
실장 유형 Through Hole Through Hole
핀 수 3 (Gate, Drain, Source) —
Avalanche Energy Rated Yes Yes (single-pulse)
RoHS 상태 Compliant Compliant
Lead-Free Yes —
MSL 레벨 N/A (through-hole) N/A (Through Hole)
Product Family — OptiMOS 5
FET Type — N-Channel
Continuous Drain Current (ID, TC=25C) — 100 A
Continuous Drain Current (ID, TC=100C) — [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Maximum Power Dissipation (PD, TC=25C) — 300 W
On-State Resistance R_DS(on) max @ VGS=10V — [DATA_NEEDED: R_DS(on) max]
Gate Charge Qg typ @ VGS=10V — [DATA_NEEDED: total gate charge]
Total Gate Charge Qg — [DATA_NEEDED: Qg value]
Reverse Recovery Charge Qrr — [DATA_NEEDED: Qrr value]
핀 수 — 3 (Gate, Drain, Source)

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