IPT026N10N5ATMA1 vs IAUC120N06S5L015ATMA1 Vergleich

Detaillierter Direktvergleich von IPT026N10N5ATMA1 von Infineon und IAUC120N06S5L015ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IAUC120N06S5L015ATMA1 IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IPT026N10N5ATMA1 IAUC120N06S5L015ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,87 $0,92
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 —
Transistortyp N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V 60 V
Gate-Source Voltage (VGS) ±20 V —
Continuous Drain Current (ID, Tc=25°C) 202 A —
Continuous Drain Current (ID, Ta) 27 A —
Maximum RDS(on) at VGS=10V 2.6 mΩ —
Maximum Power Dissipation (Tc=25°C) 214 W —
Gehäuse PG-HSOF-8-1 (TOLL) PG-TDSON-8-43 (Surface Mount)
Montageart Surface Mount Surface Mount (exposed pad)
Betriebstemperaturbereich -55 °C to +175 °C (TJ) -55C to +175C (Tj)
Configuration Single with built-in diode —
Number of Terminals 8 —
Technology Trench (OptiMOS 5) N-Channel MOSFET (OptiMOS 5)
RoHS-Status Compliant Compliant
MSL-Level [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
Gate Charge (Qg typ) [DATA_NEEDED: typical Qg] —
Continuous Drain Current (ID, Tc=25C) — 235 A
On-Resistance RDS(on) max (VGS=10 V) — 1.5 mΩ
Gate Charge (Qg, typ) — 88 nC
Power Dissipation (PD, Tc=25C) — 167 W
Automotive Qualification — AEC-Q101 qualified
Gate-Source Voltage (VGS) max — ±20 V
Drain-Source On-State Resistance Test Conditions — VGS = 10 V, ID = 50 A
Typical Application — Automotive DC-DC, battery switches, motor drives

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