IPT65R040CFD7XTMA1 vs IPW60R037P7XKSA1 Vergleich
Detaillierter Direktvergleich von IPT65R040CFD7XTMA1 von Infineon und IPW60R037P7XKSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPT65R040CFD7XTMA1 | IPW60R037P7XKSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,95 | $3,55 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | CoolMOS CFD7 | — |
| Technology | Superjunction N-channel MOSFET | CoolMOS Superjunction (SJ) |
| Drain-Source Voltage (V(BR)DSS) | 650 V | — |
| Maximum On-State Resistance RDS(on) max | 40 mOhm at VGS=10 V | — |
| Typical On-State Resistance RDS(on) typ | 34 mOhm | — |
| Continuous Drain Current ID (TC=25C) | 63 A | — |
| Gate Threshold Voltage VGS(th) | 3.5 V typical [DATA_NEEDED: full min/max] | — |
| Gate-Source Voltage VGS max | [DATA_NEEDED: +/-20 V typical for CFD7] | — |
| Gehäuse | PG-HSOF-8-2 (8-HSOF, surface mount, top-side exposed tab) | PG-TO247-3 (TO-247-3, through-hole) |
| Montageart | Surface Mount | Through Hole |
| Topology Suitability | LLC, Phase-Shift Full-Bridge, ZVS totem-pole PFC | — |
| Body Diode | Integrated fast body diode (low Qrr, hard-commutation rugged) | — |
| Betriebstemperaturbereich | -55C to +150C [DATA_NEEDED: confirm junction range] | — |
| RoHS Compliance | Compliant | — |
| MSL-Level | [DATA_NEEDED: per JEDEC J-STD-020, not in provided snippets] | — |
| Automotive Qualification | Industrial grade (AEC-Q101 variants exist separately) | — |
| Series | — | CoolMOS™ P7 |
| Transistortyp | — | N-Channel MOSFET (Superjunction) |
| Drain-Source Voltage (V_DSS) | — | 600 V |
| Continuous Drain Current (I_D, Tc=25 °C) | — | 76 A |
| On-Resistance (R_DS(on), max, V_GS=10 V) | — | 37 mΩ |
| Power Dissipation (P_D, Tc=25 °C) | — | 255 W |
| Gate Threshold Voltage (V_GS(th), typ) | — | 3.5 V |
| Betriebs-Sperrschichttemperatur | — | -55 °C to +150 °C |
| Orderable Part Number Suffix | — | XKSA1 (tube packaging, industrial) |
| RoHS-Status | — | Compliant |
| Avalanche Rated | — | Yes |