IPT65R040CFD7XTMA1 vs IPW60R037P7XKSA1 비교

다음의 상세 나란히 비교: IPT65R040CFD7XTMA1 제조: Infineon 및 IPW60R037P7XKSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IPW60R037P7XKSA1 IPW60R037P7XKSA1 - 600V 76A CoolMOS P7 MOSFET | Infineon

IPW60R037P7XKSA1 - 600V 76A CoolMOS P7 MOSFET | Infineon

IPW60R037P7XKSA1 ✓ 활성

사양 비교

파라미터 IPT65R040CFD7XTMA1 IPW60R037P7XKSA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $3.95 $3.55
Manufacturer Infineon Technologies Infineon Technologies
Part Family CoolMOS CFD7 —
Technology Superjunction N-channel MOSFET CoolMOS Superjunction (SJ)
Drain-Source Voltage (V(BR)DSS) 650 V —
Maximum On-State Resistance RDS(on) max 40 mOhm at VGS=10 V —
Typical On-State Resistance RDS(on) typ 34 mOhm —
Continuous Drain Current ID (TC=25C) 63 A —
Gate Threshold Voltage VGS(th) 3.5 V typical [DATA_NEEDED: full min/max] —
Gate-Source Voltage VGS max [DATA_NEEDED: +/-20 V typical for CFD7] —
패키지 PG-HSOF-8-2 (8-HSOF, surface mount, top-side exposed tab) PG-TO247-3 (TO-247-3, through-hole)
실장 유형 Surface Mount Through Hole
Topology Suitability LLC, Phase-Shift Full-Bridge, ZVS totem-pole PFC —
Body Diode Integrated fast body diode (low Qrr, hard-commutation rugged) —
동작 온도 범위 -55C to +150C [DATA_NEEDED: confirm junction range] —
RoHS Compliance Compliant —
MSL 레벨 [DATA_NEEDED: per JEDEC J-STD-020, not in provided snippets] —
Automotive Qualification Industrial grade (AEC-Q101 variants exist separately) —
Series — CoolMOS™ P7
트랜지스터 유형 — N-Channel MOSFET (Superjunction)
Drain-Source Voltage (V_DSS) — 600 V
Continuous Drain Current (I_D, Tc=25 °C) — 76 A
On-Resistance (R_DS(on), max, V_GS=10 V) — 37 mΩ
Power Dissipation (P_D, Tc=25 °C) — 255 W
Gate Threshold Voltage (V_GS(th), typ) — 3.5 V
동작 접합 온도 — -55 °C to +150 °C
Orderable Part Number Suffix — XKSA1 (tube packaging, industrial)
RoHS 상태 — Compliant
Avalanche Rated — Yes

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