IPT65R040CFD7XTMA1 vs IPW60R037P7XKSA1 Comparaison
Comparaison détaillée côte à côte de IPT65R040CFD7XTMA1 par Infineon et IPW60R037P7XKSA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IPT65R040CFD7XTMA1 | IPW60R037P7XKSA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $3,95 | $3,55 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | CoolMOS CFD7 | — |
| Technology | Superjunction N-channel MOSFET | CoolMOS Superjunction (SJ) |
| Drain-Source Voltage (V(BR)DSS) | 650 V | — |
| Maximum On-State Resistance RDS(on) max | 40 mOhm at VGS=10 V | — |
| Typical On-State Resistance RDS(on) typ | 34 mOhm | — |
| Continuous Drain Current ID (TC=25C) | 63 A | — |
| Gate Threshold Voltage VGS(th) | 3.5 V typical [DATA_NEEDED: full min/max] | — |
| Gate-Source Voltage VGS max | [DATA_NEEDED: +/-20 V typical for CFD7] | — |
| Boîtier | PG-HSOF-8-2 (8-HSOF, surface mount, top-side exposed tab) | PG-TO247-3 (TO-247-3, through-hole) |
| Type de montage | Surface Mount | Through Hole |
| Topology Suitability | LLC, Phase-Shift Full-Bridge, ZVS totem-pole PFC | — |
| Body Diode | Integrated fast body diode (low Qrr, hard-commutation rugged) | — |
| Plage de température de fonctionnement | -55C to +150C [DATA_NEEDED: confirm junction range] | — |
| RoHS Compliance | Compliant | — |
| Niveau MSL | [DATA_NEEDED: per JEDEC J-STD-020, not in provided snippets] | — |
| Automotive Qualification | Industrial grade (AEC-Q101 variants exist separately) | — |
| Series | — | CoolMOS™ P7 |
| Type de transistor | — | N-Channel MOSFET (Superjunction) |
| Drain-Source Voltage (V_DSS) | — | 600 V |
| Continuous Drain Current (I_D, Tc=25 °C) | — | 76 A |
| On-Resistance (R_DS(on), max, V_GS=10 V) | — | 37 mΩ |
| Power Dissipation (P_D, Tc=25 °C) | — | 255 W |
| Gate Threshold Voltage (V_GS(th), typ) | — | 3.5 V |
| Température de jonction en fonctionnement | — | -55 °C to +150 °C |
| Orderable Part Number Suffix | — | XKSA1 (tube packaging, industrial) |
| Statut RoHS | — | Compliant |
| Avalanche Rated | — | Yes |