IPT65R040CFD7XTMA1 vs IPW60R037P7XKSA1 Comparação
Comparação detalhada lado a lado de IPT65R040CFD7XTMA1 por Infineon e IPW60R037P7XKSA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | IPT65R040CFD7XTMA1 | IPW60R037P7XKSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $3,95 | $3,55 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | CoolMOS CFD7 | — |
| Technology | Superjunction N-channel MOSFET | CoolMOS Superjunction (SJ) |
| Drain-Source Voltage (V(BR)DSS) | 650 V | — |
| Maximum On-State Resistance RDS(on) max | 40 mOhm at VGS=10 V | — |
| Typical On-State Resistance RDS(on) typ | 34 mOhm | — |
| Continuous Drain Current ID (TC=25C) | 63 A | — |
| Gate Threshold Voltage VGS(th) | 3.5 V typical [DATA_NEEDED: full min/max] | — |
| Gate-Source Voltage VGS max | [DATA_NEEDED: +/-20 V typical for CFD7] | — |
| Encapsulamento | PG-HSOF-8-2 (8-HSOF, surface mount, top-side exposed tab) | PG-TO247-3 (TO-247-3, through-hole) |
| Tipo de montagem | Surface Mount | Through Hole |
| Topology Suitability | LLC, Phase-Shift Full-Bridge, ZVS totem-pole PFC | — |
| Body Diode | Integrated fast body diode (low Qrr, hard-commutation rugged) | — |
| Faixa de temperatura de operação | -55C to +150C [DATA_NEEDED: confirm junction range] | — |
| RoHS Compliance | Compliant | — |
| Nível MSL | [DATA_NEEDED: per JEDEC J-STD-020, not in provided snippets] | — |
| Automotive Qualification | Industrial grade (AEC-Q101 variants exist separately) | — |
| Series | — | CoolMOS™ P7 |
| Tipo de transistor | — | N-Channel MOSFET (Superjunction) |
| Drain-Source Voltage (V_DSS) | — | 600 V |
| Continuous Drain Current (I_D, Tc=25 °C) | — | 76 A |
| On-Resistance (R_DS(on), max, V_GS=10 V) | — | 37 mΩ |
| Power Dissipation (P_D, Tc=25 °C) | — | 255 W |
| Gate Threshold Voltage (V_GS(th), typ) | — | 3.5 V |
| Temperatura de junção de operação | — | -55 °C to +150 °C |
| Orderable Part Number Suffix | — | XKSA1 (tube packaging, industrial) |
| Status RoHS | — | Compliant |
| Avalanche Rated | — | Yes |