IPW60R037P7XKSA1 vs IMLT65R040M2HXTMA1 Vergleich
Detaillierter Direktvergleich von IPW60R037P7XKSA1 von Infineon und IMLT65R040M2HXTMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IMLT65R040M2HXTMA1 - 650V 57A 40mOhm CoolSiC G2 MOSFET | Infineon
IMLT65R040M2HXTMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPW60R037P7XKSA1 | IMLT65R040M2HXTMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,55 | $4,25 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS™ P7 | — |
| Transistortyp | N-Channel MOSFET (Superjunction) | — |
| Drain-Source Voltage (V_DSS) | 600 V | — |
| Continuous Drain Current (I_D, Tc=25 °C) | 76 A | — |
| On-Resistance (R_DS(on), max, V_GS=10 V) | 37 mΩ | — |
| Power Dissipation (P_D, Tc=25 °C) | 255 W | — |
| Gate Threshold Voltage (V_GS(th), typ) | 3.5 V | — |
| Gehäuse | PG-TO247-3 (TO-247-3, through-hole) | PG-HDSOP-16-6 (surface mount, top-side-cooled) |
| Montageart | Through Hole | Surface Mount |
| Betriebs-Sperrschichttemperatur | -55 °C to +150 °C | -55 °C to +150 °C |
| Technology | CoolMOS Superjunction (SJ) | Silicon Carbide (SiC) N-channel MOSFET |
| Orderable Part Number Suffix | XKSA1 (tube packaging, industrial) | — |
| RoHS-Status | Compliant | — |
| Avalanche Rated | Yes | — |
| Product Family | — | CoolSiC™ G2 (2nd generation SiC trench) |
| Drain-Source Voltage (VDS) | — | 650 V |
| Continuous Drain Current (ID, TC) | — | 57 A |
| Pulsed Drain Current (ID,pulse) | — | 143 A |
| On-State Resistance RDS(on) (typ, VGS=18V) | — | 40 mΩ |
| On-State Resistance RDS(on) (max, VGS=18V) | — | 49 mΩ |
| Total Gate Charge QG | — | 28 nC |
| Output Charge QOSS @ 400 V | — | 53 nC |
| Output Energy EOSS @ 400 V | — | 7.2 µJ |
| Continuous Drain Power Dissipation (PD, TC) | — | 268 W |
| Recommended Gate Drive Voltage VGS | — | 18 V (turn-off: 0 V or negative) |
| Qualification | — | JEDEC industrial |
| Packaging | — | Tape & Reel |
| Special Features | — | Kelvin source pin, low reverse-recovery charge, hard-switching optimized |