IPW60R037P7XKSA1 vs IMLT65R040M2HXTMA1 Comparaison
Comparaison détaillée côte à côte de IPW60R037P7XKSA1 par Infineon et IMLT65R040M2HXTMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IMLT65R040M2HXTMA1 - 650V 57A 40mOhm CoolSiC G2 MOSFET | Infineon
IMLT65R040M2HXTMA1 ✓ ActifComparaison des spécifications
| Paramètre | IPW60R037P7XKSA1 | IMLT65R040M2HXTMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $3,55 | $4,25 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS™ P7 | — |
| Type de transistor | N-Channel MOSFET (Superjunction) | — |
| Drain-Source Voltage (V_DSS) | 600 V | — |
| Continuous Drain Current (I_D, Tc=25 °C) | 76 A | — |
| On-Resistance (R_DS(on), max, V_GS=10 V) | 37 mΩ | — |
| Power Dissipation (P_D, Tc=25 °C) | 255 W | — |
| Gate Threshold Voltage (V_GS(th), typ) | 3.5 V | — |
| Boîtier | PG-TO247-3 (TO-247-3, through-hole) | PG-HDSOP-16-6 (surface mount, top-side-cooled) |
| Type de montage | Through Hole | Surface Mount |
| Température de jonction en fonctionnement | -55 °C to +150 °C | -55 °C to +150 °C |
| Technology | CoolMOS Superjunction (SJ) | Silicon Carbide (SiC) N-channel MOSFET |
| Orderable Part Number Suffix | XKSA1 (tube packaging, industrial) | — |
| Statut RoHS | Compliant | — |
| Avalanche Rated | Yes | — |
| Product Family | — | CoolSiC™ G2 (2nd generation SiC trench) |
| Drain-Source Voltage (VDS) | — | 650 V |
| Continuous Drain Current (ID, TC) | — | 57 A |
| Pulsed Drain Current (ID,pulse) | — | 143 A |
| On-State Resistance RDS(on) (typ, VGS=18V) | — | 40 mΩ |
| On-State Resistance RDS(on) (max, VGS=18V) | — | 49 mΩ |
| Total Gate Charge QG | — | 28 nC |
| Output Charge QOSS @ 400 V | — | 53 nC |
| Output Energy EOSS @ 400 V | — | 7.2 µJ |
| Continuous Drain Power Dissipation (PD, TC) | — | 268 W |
| Recommended Gate Drive Voltage VGS | — | 18 V (turn-off: 0 V or negative) |
| Qualification | — | JEDEC industrial |
| Packaging | — | Tape & Reel |
| Special Features | — | Kelvin source pin, low reverse-recovery charge, hard-switching optimized |