IPW60R037P7XKSA1 vs IMLT65R040M2HXTMA1 比較
詳細な並列比較: IPW60R037P7XKSA1 メーカー: Infineon および IMLT65R040M2HXTMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPW60R037P7XKSA1 | IMLT65R040M2HXTMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $3.55 | $4.25 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS™ P7 | — |
| トランジスタタイプ | N-Channel MOSFET (Superjunction) | — |
| Drain-Source Voltage (V_DSS) | 600 V | — |
| Continuous Drain Current (I_D, Tc=25 °C) | 76 A | — |
| On-Resistance (R_DS(on), max, V_GS=10 V) | 37 mΩ | — |
| Power Dissipation (P_D, Tc=25 °C) | 255 W | — |
| Gate Threshold Voltage (V_GS(th), typ) | 3.5 V | — |
| パッケージ | PG-TO247-3 (TO-247-3, through-hole) | PG-HDSOP-16-6 (surface mount, top-side-cooled) |
| 実装タイプ | Through Hole | Surface Mount |
| 動作接合温度 | -55 °C to +150 °C | -55 °C to +150 °C |
| Technology | CoolMOS Superjunction (SJ) | Silicon Carbide (SiC) N-channel MOSFET |
| Orderable Part Number Suffix | XKSA1 (tube packaging, industrial) | — |
| RoHS ステータス | Compliant | — |
| Avalanche Rated | Yes | — |
| Product Family | — | CoolSiC™ G2 (2nd generation SiC trench) |
| Drain-Source Voltage (VDS) | — | 650 V |
| Continuous Drain Current (ID, TC) | — | 57 A |
| Pulsed Drain Current (ID,pulse) | — | 143 A |
| On-State Resistance RDS(on) (typ, VGS=18V) | — | 40 mΩ |
| On-State Resistance RDS(on) (max, VGS=18V) | — | 49 mΩ |
| Total Gate Charge QG | — | 28 nC |
| Output Charge QOSS @ 400 V | — | 53 nC |
| Output Energy EOSS @ 400 V | — | 7.2 µJ |
| Continuous Drain Power Dissipation (PD, TC) | — | 268 W |
| Recommended Gate Drive Voltage VGS | — | 18 V (turn-off: 0 V or negative) |
| Qualification | — | JEDEC industrial |
| Packaging | — | Tape & Reel |
| Special Features | — | Kelvin source pin, low reverse-recovery charge, hard-switching optimized |