IPW60R037P7XKSA1 vs IPL65R200CFD7AUMA1 Vergleich
Detaillierter Direktvergleich von IPW60R037P7XKSA1 von Infineon und IPL65R200CFD7AUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPW60R037P7XKSA1 | IPL65R200CFD7AUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,55 | $1,52 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS™ P7 | CoolMOS CFD7 |
| Transistortyp | N-Channel MOSFET (Superjunction) | — |
| Drain-Source Voltage (V_DSS) | 600 V | — |
| Continuous Drain Current (I_D, Tc=25 °C) | 76 A | — |
| On-Resistance (R_DS(on), max, V_GS=10 V) | 37 mΩ | — |
| Power Dissipation (P_D, Tc=25 °C) | 255 W | — |
| Gate Threshold Voltage (V_GS(th), typ) | 3.5 V | — |
| Gehäuse | PG-TO247-3 (TO-247-3, through-hole) | PG-VSON-4 |
| Montageart | Through Hole | Surface Mount |
| Betriebs-Sperrschichttemperatur | -55 °C to +150 °C | — |
| Technology | CoolMOS Superjunction (SJ) | CoolMOS Superjunction (SJ) |
| Orderable Part Number Suffix | XKSA1 (tube packaging, industrial) | — |
| RoHS-Status | Compliant | Compliant |
| Avalanche Rated | Yes | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 650 V |
| Continuous Drain Current (ID, Tc) | — | 14 A |
| Power Dissipation (PD, Tc) | — | 81 W |
| On-Resistance (RDS(on)) | — | 0.2 ohm at VGS=10V, ID=5.2A |
| Gate Threshold Voltage (VGS(th)) | — | 3.5 V |
| Betriebstemperatur | — | -55C to +150C (TJ) |
| Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg value] |
| Body Diode | — | Fast-recovery intrinsic |
| Gate-Source ESD Protection | — | Yes (integrated) |