IPW60R037P7XKSA1 vs IPL65R200CFD7AUMA1 对比
详细并排对比 IPW60R037P7XKSA1 出自 Infineon 和 IPL65R200CFD7AUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPW60R037P7XKSA1 | IPL65R200CFD7AUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.55 | $1.52 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS™ P7 | CoolMOS CFD7 |
| 晶体管类型 | N-Channel MOSFET (Superjunction) | — |
| Drain-Source Voltage (V_DSS) | 600 V | — |
| Continuous Drain Current (I_D, Tc=25 °C) | 76 A | — |
| On-Resistance (R_DS(on), max, V_GS=10 V) | 37 mΩ | — |
| Power Dissipation (P_D, Tc=25 °C) | 255 W | — |
| Gate Threshold Voltage (V_GS(th), typ) | 3.5 V | — |
| 封装 | PG-TO247-3 (TO-247-3, through-hole) | PG-VSON-4 |
| 安装类型 | Through Hole | Surface Mount |
| 工作结温 | -55 °C to +150 °C | — |
| Technology | CoolMOS Superjunction (SJ) | CoolMOS Superjunction (SJ) |
| Orderable Part Number Suffix | XKSA1 (tube packaging, industrial) | — |
| RoHS 状态 | Compliant | Compliant |
| Avalanche Rated | Yes | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 650 V |
| Continuous Drain Current (ID, Tc) | — | 14 A |
| Power Dissipation (PD, Tc) | — | 81 W |
| On-Resistance (RDS(on)) | — | 0.2 ohm at VGS=10V, ID=5.2A |
| Gate Threshold Voltage (VGS(th)) | — | 3.5 V |
| 工作温度 | — | -55C to +150C (TJ) |
| Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg value] |
| Body Diode | — | Fast-recovery intrinsic |
| Gate-Source ESD Protection | — | Yes (integrated) |