IPW60R037P7XKSA1 vs IPL65R200CFD7AUMA1 Comparison

Detailed side-by-side comparison of IPW60R037P7XKSA1 by Infineon and IPL65R200CFD7AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPW60R037P7XKSA1 IPW60R037P7XKSA1 - 600V 76A CoolMOS P7 MOSFET | Infineon

IPW60R037P7XKSA1 - 600V 76A CoolMOS P7 MOSFET | Infineon

IPW60R037P7XKSA1 βœ“ Active
Infineon
IPL65R200CFD7AUMA1

IPL65R200CFD7AUMA1 - 650V 14A CoolMOS CFD7 MOSFET | Infineon

IPL65R200CFD7AUMA1 βœ“ Active

Specification Comparison

Parameter IPW60R037P7XKSA1 IPL65R200CFD7AUMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $3.55 $1.52
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOSβ„’ P7 CoolMOS CFD7
Transistor Type N-Channel MOSFET (Superjunction) β€”
Drain-Source Voltage (V_DSS) 600 V β€”
Continuous Drain Current (I_D, Tc=25 Β°C) 76 A β€”
On-Resistance (R_DS(on), max, V_GS=10 V) 37 mΞ© β€”
Power Dissipation (P_D, Tc=25 Β°C) 255 W β€”
Gate Threshold Voltage (V_GS(th), typ) 3.5 V β€”
Package PG-TO247-3 (TO-247-3, through-hole) PG-VSON-4
Mounting Type Through Hole Surface Mount
Operating Junction Temperature -55 Β°C to +150 Β°C β€”
Technology CoolMOS Superjunction (SJ) CoolMOS Superjunction (SJ)
Orderable Part Number Suffix XKSA1 (tube packaging, industrial) β€”
RoHS Status Compliant Compliant
Avalanche Rated Yes β€”
FET Type β€” N-Channel
Drain-Source Voltage (VDS) β€” 650 V
Continuous Drain Current (ID, Tc) β€” 14 A
Power Dissipation (PD, Tc) β€” 81 W
On-Resistance (RDS(on)) β€” 0.2 ohm at VGS=10V, ID=5.2A
Gate Threshold Voltage (VGS(th)) β€” 3.5 V
Operating Temperature β€” -55C to +150C (TJ)
Gate Charge (Qg) β€” [DATA_NEEDED: typical Qg value]
Body Diode β€” Fast-recovery intrinsic
Gate-Source ESD Protection β€” Yes (integrated)

Datasheets & Resources

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