IPW60R041C6FKSA1 vs IPW60R080P7XKSA1 Vergleich
Detaillierter Direktvergleich von IPW60R041C6FKSA1 von Infineon und IPW60R080P7XKSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPW60R041C6FKSA1 | IPW60R080P7XKSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | NRND | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $5,40 | $2,65 |
| Technology | CoolMOS™ C6 (Superjunction N-channel) | — |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | 77.5 A | — |
| Power Dissipation (PD, Tc=25°C) | 481 W | — |
| On-State Resistance (RDS(on)) | 41 mΩ at VGS=10V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 2.5 V to 3.5 V typical | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Rise Time (tr) | [DATA_NEEDED: tr value] | — |
| Fall Time (tf) | [DATA_NEEDED: tf value] | — |
| Betriebstemperaturbereich | -55°C to +150°C | -55 C to +150 C (junction) |
| Gehäuse | PG-TO247-3-1 (TO-247-3) | PG-TO247-3 (TO-247, 3-pin through-hole) |
| Montageart | Through Hole | Through Hole |
| MSL-Level | Not Applicable (Through-hole) | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolMOS P7 |
| Transistortyp | — | N-Channel MOSFET |
| Continuous Drain Current (ID, Tc) | — | 37 A |
| Power Dissipation (PD, Tc) | — | 129 W |
| RDS(on) (typ) | — | 69 mΩ at VGS = 10 V |
| Gate-Source Threshold Voltage (VGS(th)) | — | 3.5 V (typ, per datasheet family) |
| Gate Charge (Qg, typ) | — | [DATA_NEEDED: Qg value] |
| Rise Time / Fall Time (tr/tf) | — | [DATA_NEEDED: tr/tf value] |
| Packaging | — | Tube (XKSA1 ordering suffix) |