IPW60R041C6FKSA1 vs IPW60R080P7XKSA1 Comparison

Detailed side-by-side comparison of IPW60R041C6FKSA1 by Infineon and IPW60R080P7XKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPW60R080P7XKSA1 IPW60R080P7XKSA1 - 600V CoolMOS P7 N-Channel MOSFET | Infineon

IPW60R080P7XKSA1 - 600V CoolMOS P7 N-Channel MOSFET | Infineon

IPW60R080P7XKSA1 βœ“ Active

Specification Comparison

Parameter IPW60R041C6FKSA1 IPW60R080P7XKSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Nrnd Active
Stock Status In Stock In Stock
Unit Price (USD) $5.40 $2.65
Technology CoolMOSβ„’ C6 (Superjunction N-channel) β€”
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID, Tc=25Β°C) 77.5 A β€”
Power Dissipation (PD, Tc=25Β°C) 481 W β€”
On-State Resistance (RDS(on)) 41 mΞ© at VGS=10V β€”
Gate-Source Voltage (VGS) max Β±20 V β€”
Gate Threshold Voltage (VGS(th)) 2.5 V to 3.5 V typical β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] β€”
Rise Time (tr) [DATA_NEEDED: tr value] β€”
Fall Time (tf) [DATA_NEEDED: tf value] β€”
Operating Temperature Range -55Β°C to +150Β°C -55 C to +150 C (junction)
Package PG-TO247-3-1 (TO-247-3) PG-TO247-3 (TO-247, 3-pin through-hole)
Mounting Type Through Hole Through Hole
MSL Level Not Applicable (Through-hole) β€”
RoHS Status Compliant Compliant
Lead-Free Yes β€”
Manufacturer β€” Infineon Technologies
Product Family β€” CoolMOS P7
Transistor Type β€” N-Channel MOSFET
Continuous Drain Current (ID, Tc) β€” 37 A
Power Dissipation (PD, Tc) β€” 129 W
RDS(on) (typ) β€” 69 mΞ© at VGS = 10 V
Gate-Source Threshold Voltage (VGS(th)) β€” 3.5 V (typ, per datasheet family)
Gate Charge (Qg, typ) β€” [DATA_NEEDED: Qg value]
Rise Time / Fall Time (tr/tf) β€” [DATA_NEEDED: tr/tf value]
Packaging β€” Tube (XKSA1 ordering suffix)

Datasheets & Resources

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