IQDH29NE2LM5CGSCATMA1 vs IQDH88N06LM5CGSCATMA1 Vergleich
Detaillierter Direktvergleich von IQDH29NE2LM5CGSCATMA1 von Infineon und IQDH88N06LM5CGSCATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IQDH29NE2LM5CGSCATMA1 | IQDH88N06LM5CGSCATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,84 | $2,31 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 Power-Transistor | OptiMOS 5 (trench) |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (Ta) | 75 A | — |
| Continuous Drain Current (Tc) | 789 A | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 278 W | — |
| Maximum On-Resistance RDS(on) | 0.29 mΩ | — |
| Gate Threshold Voltage VGS(th) | 2 V (typ) | [DATA_NEEDED: VGS(th) typical] |
| Gehäuse | PG-WHTFN-9-U02 (WHTFN EP) | PG-WHTFN-9-U02 (PQFN 5x6) |
| Pin-Anzahl | 9 | 9 (with exposed pad) |
| Montageart | Surface Mount | Surface Mount |
| Cooling | Dual-side exposed pad (top + bottom) | Dual-side cooling capable |
| MSL-Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| RoHS-Status | Compliant | Compliant |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (V(BR)DSS) | — | 60 V |
| Continuous Drain Current (Ta=25°C) | — | 42 A |
| Kontinuierlicher Drain-Strom (TC=25°C) | — | 447 A |
| On-Resistance RDS(on) typical @ VGS=10V | — | 0.86 mΩ |
| Power Dissipation (Ta=25°C) | — | 3 W |
| Verlustleistung (TC=25°C) | — | 333 W |
| Gate Charge Qg typical | — | [DATA_NEEDED: Qg typical nC] |
| Betriebstemperaturbereich | — | -55°C to +175°C (TJ) |
| Polarity | — | N-Channel |
| Configuration | — | Single |