IQDH29NE2LM5CGSCATMA1 vs IQDH88N06LM5CGSCATMA1 Comparison

Detailed side-by-side comparison of IQDH29NE2LM5CGSCATMA1 by Infineon and IQDH88N06LM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQDH29NE2LM5CGSCATMA1

IQDH29NE2LM5CGSCATMA1 - 25V N-Ch 0.29mΞ© MOSFET | Infineon

IQDH29NE2LM5CGSCATMA1 βœ“ Active
Infineon
IQDH88N06LM5CGSCATMA1

IQDH88N06LM5CGSCATMA1 - 60V N-Ch MOSFET 0.86mΞ© | Infineon

IQDH88N06LM5CGSCATMA1 βœ“ Active

Specification Comparison

Parameter IQDH29NE2LM5CGSCATMA1 IQDH88N06LM5CGSCATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.84 $2.31
FET Type N-Channel β€”
Technology OptiMOS 5 Power-Transistor OptiMOS 5 (trench)
Drain-Source Voltage (VDS) 25 V β€”
Continuous Drain Current (Ta) 75 A β€”
Continuous Drain Current (Tc) 789 A β€”
Power Dissipation (Ta) 2.5 W β€”
Power Dissipation (Tc) 278 W β€”
Maximum On-Resistance RDS(on) 0.29 mΞ© β€”
Gate Threshold Voltage VGS(th) 2 V (typ) [DATA_NEEDED: VGS(th) typical]
Package PG-WHTFN-9-U02 (WHTFN EP) PG-WHTFN-9-U02 (PQFN 5x6)
Pin Count 9 9 (with exposed pad)
Mounting Type Surface Mount Surface Mount
Cooling Dual-side exposed pad (top + bottom) Dual-side cooling capable
MSL Level [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
RoHS Status Compliant Compliant
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (V(BR)DSS) β€” 60 V
Continuous Drain Current (Ta=25Β°C) β€” 42 A
Continuous Drain Current (Tc=25Β°C) β€” 447 A
On-Resistance RDS(on) typical @ VGS=10V β€” 0.86 mΞ©
Power Dissipation (Ta=25Β°C) β€” 3 W
Power Dissipation (Tc=25Β°C) β€” 333 W
Gate Charge Qg typical β€” [DATA_NEEDED: Qg typical nC]
Operating Temperature Range β€” -55Β°C to +175Β°C (TJ)
Polarity β€” N-Channel
Configuration β€” Single

Datasheets & Resources

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