IQDH35N03LM5CGATMA1 vs IRFH8318TRPBF Vergleich
Detaillierter Direktvergleich von IQDH35N03LM5CGATMA1 von Infineon und IRFH8318TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IQDH35N03LM5CGATMA1 - 30V 700A 0.35mΩ N-Channel MOSFET | Infineon
IQDH35N03LM5CGATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IQDH35N03LM5CGATMA1 | IRFH8318TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,45 | $0,48 |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta | 66 A | — |
| Pulsed Drain Current (IDM) at Tc | 700 A | — |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-to-Source On-Resistance (RDS(on)) | 0.35 mΩ (typical at VGS=10 V) | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 278 W | — |
| Betriebstemperaturbereich | -55 °C to +175 °C | — |
| Gehäuse | PG-TTFN-9-U02 (PQFN 5x6 mm²) | PQFN 5x6 (SuperSO8, 8-PowerTDFN) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 | 1 |
| RoHS-Status | Compliant | Compliant |
| Halogenfrei | Yes | — |
| Channel Type | N-Channel | — |
| Technology | OptiMOS 5 trench MOSFET | StrongIRFET™ (N-Channel Trench MOSFET) |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IRFH8318TRPBF |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta=25°C | — | 27 A |
| Continuous Drain Current (ID) at Tc=25°C | — | 120 A |
| On-Resistance RDS(on) max at VGS=10V | — | 3.1 mΩ |
| Total Gate Charge (Qg) | — | 41 nC |
| Power Dissipation (Ta) | — | 3.6 W |
| Power Dissipation (Tc) | — | 59 W |
| Betriebstemperatur | — | -55°C to +150°C |
| Lead-Free | — | Yes |
| Description | — | Synchronous MOSFET for high-frequency buck converters |