IQDH35N03LM5SCATMA1 vs IQD063N15NM5SCATMA1 Vergleich
Detaillierter Direktvergleich von IQDH35N03LM5SCATMA1 von Infineon und IQD063N15NM5SCATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon
IQDH35N03LM5SCATMA1 ✓ AktivInfineon
IQD063N15NM5SCATMA1 - 150V 5.1mΩ OptiMOS 5 N-Channel MOSFET | Infineon
IQD063N15NM5SCATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IQDH35N03LM5SCATMA1 | IQD063N15NM5SCATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,05 | $2,35 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Transistortyp | N-Channel MOSFET | — |
| Technology | OptiMOS 5 (trench, shielded-gate) | — |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Continuous Drain Current (ID) at Ta | 66 A | — |
| Pulsed Drain Current (IDM) at Tc | 700 A | — |
| On-State Resistance (RDS(on)) max | 0.35 mOhm @ VGS=10V | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 278 W | — |
| Gehäuse | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) | PG-WHSON-8-U02 (WHSON-8 with exposed pad) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55 C to +175 C | -55°C to +175°C |
| MSL-Level | 1 (unlimited) | — |
| RoHS-Status | Compliant | Compliant |
| Marking | IQDH35N03LM5S | — |
| Series | — | OptiMOS™ 5 |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID) at TC=25°C | — | 151 A |
| Continuous Drain Current (ID) at TA=25°C | — | 14.4 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) at VGS=10V | — | 5.1 mΩ |
| On-Resistance RDS(on) at VGS=4.5V | — | 6.32 mΩ (typ) |
| Gate-Source Threshold Voltage (VGS(th)) | — | 3.8 V (max) |
| Total Gate Charge (QG) at VGS=10V | — | 48 nC |
| Input Capacitance (Ciss) | — | 3.6 nF |
| Output Capacitance (Coss) | — | 900 pF |
| Reverse Transfer Capacitance (Crss) | — | 21 pF |
| Maximum Power Dissition (PD) at TC=25°C | — | 333 W |
| Maximum Power Dissition (PD) at TA=25°C | — | 3 W |