IQDH35N03LM5SCATMA1 vs IQD063N15NM5SCATMA1 Comparison
Detailed side-by-side comparison of IQDH35N03LM5SCATMA1 by Infineon and IQD063N15NM5SCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQDH35N03LM5SCATMA1
IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon
IQDH35N03LM5SCATMA1 β ActiveInfineon
IQD063N15NM5SCATMA1
IQD063N15NM5SCATMA1 - 150V 5.1mΞ© OptiMOS 5 N-Channel MOSFET | Infineon
IQD063N15NM5SCATMA1 β ActiveSpecification Comparison
| Parameter | IQDH35N03LM5SCATMA1 | IQD063N15NM5SCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.05 | $2.35 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Transistor Type | N-Channel MOSFET | β |
| Technology | OptiMOS 5 (trench, shielded-gate) | β |
| Drain-Source Voltage (VDS) max | 30 V | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Continuous Drain Current (ID) at Ta | 66 A | β |
| Pulsed Drain Current (IDM) at Tc | 700 A | β |
| On-State Resistance (RDS(on)) max | 0.35 mOhm @ VGS=10V | β |
| Power Dissipation (PD) at Ta | 2.5 W | β |
| Power Dissipation (PD) at Tc | 278 W | β |
| Package | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) | PG-WHSON-8-U02 (WHSON-8 with exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +175 C | -55Β°C to +175Β°C |
| MSL Level | 1 (unlimited) | β |
| RoHS Status | Compliant | Compliant |
| Marking | IQDH35N03LM5S | β |
| Series | β | OptiMOSβ’ 5 |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 150 V |
| Continuous Drain Current (ID) at TC=25Β°C | β | 151 A |
| Continuous Drain Current (ID) at TA=25Β°C | β | 14.4 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) at VGS=10V | β | 5.1 mΞ© |
| On-Resistance RDS(on) at VGS=4.5V | β | 6.32 mΞ© (typ) |
| Gate-Source Threshold Voltage (VGS(th)) | β | 3.8 V (max) |
| Total Gate Charge (QG) at VGS=10V | β | 48 nC |
| Input Capacitance (Ciss) | β | 3.6 nF |
| Output Capacitance (Coss) | β | 900 pF |
| Reverse Transfer Capacitance (Crss) | β | 21 pF |
| Maximum Power Dissition (PD) at TC=25Β°C | β | 333 W |
| Maximum Power Dissition (PD) at TA=25Β°C | β | 3 W |