IQDH88N06LM5CGSCATMA1 vs IQE022N06LM5CGSCATMA1 Vergleich
Detaillierter Direktvergleich von IQDH88N06LM5CGSCATMA1 von Infineon und IQE022N06LM5CGSCATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IQDH88N06LM5CGSCATMA1 | IQE022N06LM5CGSCATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,31 | $2,05 |
| Transistortyp | N-Channel MOSFET | — |
| Technology | OptiMOS 5 (trench) | — |
| Drain-Source Voltage (V(BR)DSS) | 60 V | — |
| Continuous Drain Current (Ta=25°C) | 42 A | — |
| Kontinuierlicher Drain-Strom (TC=25°C) | 447 A | — |
| On-Resistance RDS(on) typical @ VGS=10V | 0.86 mΩ | — |
| Power Dissipation (Ta=25°C) | 3 W | — |
| Verlustleistung (TC=25°C) | 333 W | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate Charge Qg typical | [DATA_NEEDED: Qg typical nC] | — |
| Betriebstemperaturbereich | -55°C to +175°C (TJ) | -55C to +150C |
| Gehäuse | PG-WHTFN-9-U02 (PQFN 5x6) | PG-WHTFN-9 (5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 9 (with exposed pad) | 9 (PG-WHTFN-9) |
| Cooling | Dual-side cooling capable | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL Level] |
| RoHS-Status | Compliant | Compliant |
| Polarity | N-Channel | — |
| Configuration | Single | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (TC) | — | 151 A |
| Continuous Drain Current (TA) | — | 24 A |
| Maximum Power Dissipation (TC) | — | 100 W |
| Maximum Power Dissipation (TA) | — | 2.5 W |
| RDS(on) Maximum at VGS=10V | — | 2.2 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | 2.3 V (typ) |
| Technology Family | — | OptiMOS 5 |