IQE022N06LM5CGATMA1 vs ISC015N06NM5ATMA1 Vergleich

Detaillierter Direktvergleich von IQE022N06LM5CGATMA1 von Infineon und ISC015N06NM5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IQE022N06LM5CGATMA1 ISC015N06NM5ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,78 $0,62
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 5 —
Technology N-Channel Power MOSFET (Enhancement Mode) Trench MOSFET (OptiMOS 5)
Drain-Source Voltage (V_DS) 60 V —
Continuous Drain Current (I_D) at T_A=25C 24 A —
Continuous Drain Current (I_D) at T_C=25C 151 A —
R_DS(on) (typical, V_GS=10V) 2.2 mΩ —
Gate-Source Voltage (V_GS) max [DATA_NEEDED: V_GS max rating] —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) value] —
Total Gate Charge (Q_G) [DATA_NEEDED: Q_G value] —
Power Dissipation (T_A) 2.5 W —
Power Dissipation (T_C) 100 W —
Betriebstemperaturbereich -55C to +150C -55 C to +175 C
Gehäuse PG-TTFN-9-3 (PQFN 3.3x3.3 mm) PG-TDSON-8 (PQFN 5x6) Drain-Down
Montageart Surface Mount Surface Mount
Pin-Anzahl 9 (with exposed thermal pad) —
RoHS-Status Compliant Compliant
Lead-Free Yes —
Product Family — OptiMOS 5
Polarity / Channel Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TA=25C — 33 A
Pulsed Drain Current (IDM) at TC=25C — 259 A
On-Resistance RDS(on) typical at VGS=10V — 1.5 mOhm
Total Power Dissipation (TA) — 3 W
Total Power Dissipation (TC) — 188 W
MSL (Moisture Sensitivity Level) — 1

Datenblätter & Ressourcen

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