IQEH50NE2LM7ZCGATMA1 vs IQFH55N04NM6ATMA1 Vergleich
Detaillierter Direktvergleich von IQEH50NE2LM7ZCGATMA1 von Infineon und IQFH55N04NM6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
IQEH50NE2LM7ZCGATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IQEH50NE2LM7ZCGATMA1 | IQFH55N04NM6ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,42 | $1,38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (Vds) Max | 25 V | — |
| Continuous Drain Current (Ta) | 54 A | — |
| Continuous Drain Current (Tc) | 422 A | — |
| Maximum On-Resistance (Rds(on)) | 0.5 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 1.7 V | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 150 W | — |
| Maximum Junction Temperature | +175 degrees C | — |
| Betriebstemperaturbereich | -55 degrees C to +175 degrees C | — |
| Gehäuse | PG-TTFN-9-3 | PG-TSON-12-1 (PQFN 8x6 mm², clip-based) |
| Montageart | Surface Mount | Surface Mount |
| Technology | OptiMOS 7 (Trench-Gate) | Trench MOSFET (OptiMOS 6 generation) |
| RoHS-Status | Compliant | Compliant |
| Qualification | Industrial grade per Infineon datasheet | — |
| Part Family | — | OptiMOS 6 |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D) @ TA=25°C | — | 53 A |
| Pulsed Drain Current @ TC=25°C | — | 451 A |
| Static R_DS(on) (typ) | — | 0.55 mΩ |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 214 W |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical] |
| Gate Charge (Q_G) | — | [DATA_NEEDED: total gate charge] |
| Betriebs-Sperrschichttemperatur | — | -55°C to +175°C |
| AEC-Q100 | — | [DATA_NEEDED: automotive qualification status] |