IQEH50NE2LM7ZCGATMA1 vs IQFH55N04NM6ATMA1 Comparison

Detailed side-by-side comparison of IQEH50NE2LM7ZCGATMA1 by Infineon and IQFH55N04NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IQEH50NE2LM7ZCGATMA1 IQFH55N04NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 Power-Transistor —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (Vds) Max 25 V —
Continuous Drain Current (Ta) 54 A —
Continuous Drain Current (Tc) 422 A —
Maximum On-Resistance (Rds(on)) 0.5 mOhm —
Gate Threshold Voltage (Vgs(th)) 1.7 V —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 150 W —
Maximum Junction Temperature +175 degrees C —
Operating Temperature Range -55 degrees C to +175 degrees C —
Package PG-TTFN-9-3 PG-TSON-12-1 (PQFN 8x6 mm², clip-based)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 7 (Trench-Gate) Trench MOSFET (OptiMOS 6 generation)
RoHS Status Compliant Compliant
Qualification Industrial grade per Infineon datasheet —
Part Family — OptiMOS 6
Transistor Type — N-Channel MOSFET
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D) @ TA=25°C — 53 A
Pulsed Drain Current @ TC=25°C — 451 A
Static R_DS(on) (typ) — 0.55 mΩ
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 214 W
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical]
Gate Charge (Q_G) — [DATA_NEEDED: total gate charge]
Operating Junction Temperature — -55°C to +175°C
AEC-Q100 — [DATA_NEEDED: automotive qualification status]

Datasheets & Resources

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