IQEH50NE2LM7ZCGATMA1 vs IQFH55N04NM6ATMA1 对比
详细并排对比 IQEH50NE2LM7ZCGATMA1 出自 Infineon 和 IQFH55N04NM6ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
IQEH50NE2LM7ZCGATMA1 ✓ 量产中规格对比
| 参数 | IQEH50NE2LM7ZCGATMA1 | IQFH55N04NM6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.42 | $1.38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (Vds) Max | 25 V | — |
| Continuous Drain Current (Ta) | 54 A | — |
| Continuous Drain Current (Tc) | 422 A | — |
| Maximum On-Resistance (Rds(on)) | 0.5 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 1.7 V | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 150 W | — |
| Maximum Junction Temperature | +175 degrees C | — |
| 工作温度范围 | -55 degrees C to +175 degrees C | — |
| 封装 | PG-TTFN-9-3 | PG-TSON-12-1 (PQFN 8x6 mm², clip-based) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | OptiMOS 7 (Trench-Gate) | Trench MOSFET (OptiMOS 6 generation) |
| RoHS 状态 | Compliant | Compliant |
| Qualification | Industrial grade per Infineon datasheet | — |
| Part Family | — | OptiMOS 6 |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D) @ TA=25°C | — | 53 A |
| Pulsed Drain Current @ TC=25°C | — | 451 A |
| Static R_DS(on) (typ) | — | 0.55 mΩ |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 214 W |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical] |
| Gate Charge (Q_G) | — | [DATA_NEEDED: total gate charge] |
| 工作结温 | — | -55°C to +175°C |
| AEC-Q100 | — | [DATA_NEEDED: automotive qualification status] |