IQEH50NE2LM7ZCGATMA1 vs IQFH55N04NM6ATMA1 Comparaison
Comparaison détaillée côte à côte de IQEH50NE2LM7ZCGATMA1 par Infineon et IQFH55N04NM6ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
IQEH50NE2LM7ZCGATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IQEH50NE2LM7ZCGATMA1 | IQFH55N04NM6ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,42 | $1,38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (Vds) Max | 25 V | — |
| Continuous Drain Current (Ta) | 54 A | — |
| Continuous Drain Current (Tc) | 422 A | — |
| Maximum On-Resistance (Rds(on)) | 0.5 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 1.7 V | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 150 W | — |
| Maximum Junction Temperature | +175 degrees C | — |
| Plage de température de fonctionnement | -55 degrees C to +175 degrees C | — |
| Boîtier | PG-TTFN-9-3 | PG-TSON-12-1 (PQFN 8x6 mm², clip-based) |
| Type de montage | Surface Mount | Surface Mount |
| Technology | OptiMOS 7 (Trench-Gate) | Trench MOSFET (OptiMOS 6 generation) |
| Statut RoHS | Compliant | Compliant |
| Qualification | Industrial grade per Infineon datasheet | — |
| Part Family | — | OptiMOS 6 |
| Type de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D) @ TA=25°C | — | 53 A |
| Pulsed Drain Current @ TC=25°C | — | 451 A |
| Static R_DS(on) (typ) | — | 0.55 mΩ |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 214 W |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical] |
| Gate Charge (Q_G) | — | [DATA_NEEDED: total gate charge] |
| Température de jonction en fonctionnement | — | -55°C to +175°C |
| AEC-Q100 | — | [DATA_NEEDED: automotive qualification status] |