IQEH54NE2LM7UCGATMA1 vs IQEH46NE2LM7UCGSCATMA1 Vergleich

Detaillierter Direktvergleich von IQEH54NE2LM7UCGATMA1 von Infineon und IQEH46NE2LM7UCGSCATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IQEH46NE2LM7UCGSCATMA1 IQEH46NE2LM7UCGSCATMA1 - 25V 440A OptiMOS 7 N-FET | Infineon

IQEH46NE2LM7UCGSCATMA1 - 25V 440A OptiMOS 7 N-FET | Infineon

IQEH46NE2LM7UCGSCATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IQEH54NE2LM7UCGATMA1 IQEH46NE2LM7UCGSCATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,95 $1,65
Manufacturer Infineon Technologies —
Product Family OptiMOS 7 Power-Transistor —
Channel Type N-Channel —
Drain-Source Voltage (VDS) 25 V 25 V
Continuous Drain Current (ID) at Ta 52 A —
Continuous Drain Current (ID) at Tc 406 A —
Power Dissipation at Ta 2.5 W —
Power Dissipation at Tc 150 W —
Gehäuse PG-TTFN-9-3 PG-WHTFN-9-1 (PQFN 3.3x3.3 Source-Down)
Montageart Surface Mount Surface Mount
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] 2 V
On-Resistance (RDS(on)) at 10V VGS [DATA_NEEDED: RDS(on) max in mohm at VGS=10V] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical in nC] —
Betriebstemperaturbereich -55C to +150C (typical MOSFET range) —
RoHS-Status Compliant Compliant
MSL-Level [DATA_NEEDED: MSL rating] —
Transistortyp — N-Channel MOSFET
Technology — OptiMOS 7 (trench)
Continuous Drain Current (ID) at TC — 440 A
Continuous Drain Current (ID) at TA — 57 A
Power Dissipation at TA — 2.5 W
Power Dissipation at TC — 150 W
Maximum On-Resistance (RDS(on)) — 0.46 mOhm
Polarity / Channel Type — Single N-Channel
Operating Mode — Enhancement-mode
Topology Suitability — Hard- and soft-switching

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern