IQEH54NE2LM7UCGATMA1 vs IQEH46NE2LM7UCGSCATMA1 Comparaison
Comparaison détaillée côte à côte de IQEH54NE2LM7UCGATMA1 par Infineon et IQEH46NE2LM7UCGSCATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IQEH54NE2LM7UCGATMA1 - 25V OptiMOS 7 N-Channel MOSFET | Infineon
IQEH54NE2LM7UCGATMA1 ✓ ActifInfineon
IQEH46NE2LM7UCGSCATMA1 - 25V 440A OptiMOS 7 N-FET | Infineon
IQEH46NE2LM7UCGSCATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IQEH54NE2LM7UCGATMA1 | IQEH46NE2LM7UCGSCATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,95 | $1,65 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 7 Power-Transistor | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 25 V | 25 V |
| Continuous Drain Current (ID) at Ta | 52 A | — |
| Continuous Drain Current (ID) at Tc | 406 A | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 150 W | — |
| Boîtier | PG-TTFN-9-3 | PG-WHTFN-9-1 (PQFN 3.3x3.3 Source-Down) |
| Type de montage | Surface Mount | Surface Mount |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | 2 V |
| On-Resistance (RDS(on)) at 10V VGS | [DATA_NEEDED: RDS(on) max in mohm at VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical in nC] | — |
| Plage de température de fonctionnement | -55C to +150C (typical MOSFET range) | — |
| Statut RoHS | Compliant | Compliant |
| Niveau MSL | [DATA_NEEDED: MSL rating] | — |
| Type de transistor | — | N-Channel MOSFET |
| Technology | — | OptiMOS 7 (trench) |
| Continuous Drain Current (ID) at TC | — | 440 A |
| Continuous Drain Current (ID) at TA | — | 57 A |
| Power Dissipation at TA | — | 2.5 W |
| Power Dissipation at TC | — | 150 W |
| Maximum On-Resistance (RDS(on)) | — | 0.46 mOhm |
| Polarity / Channel Type | — | Single N-Channel |
| Operating Mode | — | Enhancement-mode |
| Topology Suitability | — | Hard- and soft-switching |