IR2010SPBF vs IR2109SPBF Vergleich
Detaillierter Direktvergleich von IR2010SPBF von Infineon und IR2109SPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IR2010SPBF | IR2109SPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,20 | $1,05 |
| Configuration | Half-Bridge (high + low side) | — |
| Number of Drivers | 2 (independent high/low-side outputs) | 2 (high-side + low-side) |
| Offset Voltage (max) | 200 V | — |
| Peak Source/Sink Current | 3 A / 3 A | — |
| Logic Input Compatibility | CMOS or LSTTL, down to 3.0 V | — |
| Propagation Delay (typ) | 95 ns | — |
| Rise / Fall Time (typ) | [DATA_NEEDED: rise/fall time] | — |
| VCC Supply Voltage (low side) | 10 V to 20 V | — |
| VB Bootstrap Supply (high side) | VCC + 10 V to VCC + 20 V | — |
| Betriebstemperatur | -40C to +150C | — |
| Shutdown Feature | Yes (active input) | — |
| Gehäuse | 16-SOIC (SOIC-16) | SOIC-8 |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | [DATA_NEEDED: MSL rating] | — |
| RoHS-Status | Compliant (Pb-free PBF suffix) | Compliant |
| Drive Technology | High-speed power MOSFET / IGBT driver | — |
| Channel Matching | Matched propagation delays for cross-conduction minimization | — |
| Driver Configuration | — | Half-Bridge |
| High-Side Voltage Tolerance | — | 600 V |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Source Current (typical) | — | 0.2 A |
| Sink Current (typical) | — | 0.35 A |
| Turn-On Propagation Delay | — | 150 ns |
| Turn-Off Propagation Delay | — | 150 ns |
| Anstiegszeit | — | 200 ns |
| Abfallzeit | — | 50 ns |
| Quiescent VCC Current | — | 1 mA |
| Input Logic Compatibility | — | 3.3 V / 5 V CMOS / TTL |
| Undervoltage Lockout | — | Yes (VCC) |
| Bootstrap Diode | — | Integrated |
| Betriebs-Sperrschichttemperatur | — | -40 C to +150 C |