IR2011STRPBF vs IRS2104STRPBF Vergleich

Detaillierter Direktvergleich von IR2011STRPBF von Infineon und IRS2104STRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IR2011STRPBF IRS2104STRPBF
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,71 $0,45
Configuration High-Side and Low-Side (Independent) —
Number of Drivers 2 (Half-Bridge) —
Peak Source Current 1 A (typical) —
Peak Sink Current 1 A (typical) —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Floating Supply Voltage (VBS) 10 V to 20 V (operational to +200 V) —
Logic Input Compatibility 3.0 V CMOS or LSTTL Standard CMOS / LSTTL
Propagation Delay (typ.) 80 ns 150 ns
Turn-On Rise Time (typ.) 35 ns —
Turn-Off Fall Time (typ.) 20 ns —
Offset Voltage Rating 200 V —
Negative Transient Tolerance dV/dt immune —
Betriebstemperatur -40 C to +125 C —
Gehäuse 8-SOIC (3.90 mm body width) 8-Lead SOIC (SOIC-8)
Montageart Surface Mount Surface Mount
Lead-Free / RoHS Lead-Free, RoHS Compliant —
Product Type — Half-Bridge Gate Driver IC
Topologie — Half-Bridge (High-Side + Low-Side)
Number of Channels — 2 (HS + LS, dependent)
High-Side Offset Voltage (VS) — -5 V to +600 V
Logic Supply Voltage (VCC) — 10 V to 20 V
Source Current (typ.) — 0.29 A
Sink Current (typ.) — 0.6 A
Rise Time (typ.) — 35 ns
Fall Time (typ.) — 70 ns
Quiescent Current (typ.) — 150 uA
Undervoltage Protection — Yes (VCC and VBS UVLO)
Shutdown Pin — Yes (SD, active-low per typical usage)
Betriebs-Sperrschichttemperatur — -40C to +150C
MSL-Level — 2 (1 year floor life per datasheet)
Qualification Level — Industrial
RoHS-Status — Compliant (PbF suffix)

Datenblätter & Ressourcen

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